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Lüth, H.

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JuSER: Hits 81 - 100 of 200

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Select result number 81

Journal Article

Modelling of polarization charge induced asymmetry of IV-characteristics for AlN/GaN based resonant tunneling structures

Indlekofer, K. M.
2002

Physica status solidi / B, 234 (2002) S. 769 - 772

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Select result number 82

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Resonant-tunneling effect in a periodically modulated electrical field

Vitusevich, S.
2002

Physica / E, 13 (2002) S. 811

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Select result number 83

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Micro- and nanopatterning of sensor chips by means of macroporous silicon

Kurowski, A.
2002

Sensors and actuators / B, 83 (2002) S. 123

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Select result number 84

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Evaluation of a chip-based thin-film/thick-film sensor hybrid for (bio-)chemical analysis

Schöning, M. J.
2002

Electroanalysis, 14 (2002) S. 955

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Select result number 85

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Resonant tunneling effect in a periodically modulated electrical field

Vitusevich, S. A.
2002

Physica / E, 13 (2002) S. 811 - 814

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Select result number 86

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Top contact for vertical double-gate MOSFETs

Moers, J.
2002

Microelectronic engineering, 64 (2002) S. 465 - 471

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Select result number 87

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Density-matrix description of a quantum dot system with variable laterial confinement in the single-electron tunneling regime

Indlekofer, K. M.
2002

Physica / B, 314 (2002) S. 499 - 502

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Select result number 88

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Homogeneity analysis of ion-implanted resonant tunneling diodes for applications in digital logic circuits

Malindretos, J.
2002

Superlattices and microstructures, 31 (2002) S. 315 - 325

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Select result number 89

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AlGaN/GaN HEMTs on (111) silicon substrates

Javorka, P.
2002

IEEE Electron Device Letters, 23 (2002) S. 4 - 6

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Select result number 90

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A (bio-)chemical field-effect sensor with macroporous Si as substrate material and a SiO2/LPCVD-Si3N4 double layer as pH transducer

Schöning, M. J.
2002

Sensors, 2 (2002) S. 11

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Select result number 91

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Solid-state thin film sensors based on chalcogenide materials prepared by means of planar technology and pulsed laser deposition

Vlasov, Yu. G.
2002

Journal of applied electrochemistry, 75 (2002) S. 365

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Select result number 92

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Growth and characterisation of AlGaN/GaN/HEMT on silicon substrates

Kalisch, H.
2002

Physica status solidi / A, 194 (2002) S. 464 - 467

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Select result number 93

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Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs

Wolter, M.
2002

Physica status solidi / C (2002) S. 82 - 85

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Select result number 94

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Comment on : Influence of crystal polarity on the properties of Pt/GaN Schottky diodes (77 (2000), S. 2012)

Rizzi, A.
2002

Applied physics letters, 80 (2002) S. 530 - 531

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Select result number 95

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III-V semiconductor interface properties as a knowledge basis for modern heterostructure devices

Rizzi, A.
2002

Applied physics / A, 75 (2002) S. 69 - 77

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Select result number 96

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Investigation of AlGaN/GaN HEMTs on Si substrate using backgating

Marso, A.
2002

Physica status solidi / C (2002) S. 65 - 68

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Select result number 97

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Carrier transport in multi-terminal superconductor/two-dimensional electron gas Josephson junctions

Guzenko, V. A.
2001

Physica / C, 352 (2001) S. 144

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Select result number 98

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The influence of nucleation parameters on GaN buffer layer properties used for HEMT application

Nastase, N.
2001

Physica status solidi / A, 188 (2001) S. 647

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Select result number 99

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Development of multisensor systems based on chalcogenide thin film chemical sensors for the simultaneous multicomponent analysis of metal ions in complex solutions

Mourzina, Y. G.
2001

Electrochimica acta, 47 (2001) S. 251

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100

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Copper, cadmium and thallium thin film sensors based on chalcogenide glasses

Mourzina, Y. G.
2001

Analytica chimica acta, 433 (2001) S. 103

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Publications database 194 Open Access 66

Journal Article

Lüth, H. Kordos, P. 47 Marso, M. 47 Schöning, Michael J. 43 Schäpers, Thomas 30 Calarco, R. 22 more ... Förster, A. 21 Hardtdegen, Hilde 19 Meijers, R. 18 Belyaev, A. E. 16 Javorka, P. 15 Rizzi, A. 14 Vitusevich, Svetlana 14 Vescan, L. 13 Danylyuk, S. V. 12 Stoica, T. 12 Fox, P. T. 11 Heuken, M. 11 Moers, J. 11 Richter, T. 11 Indlekofer, K. M. 10 Schubert, Jürgen 10 Simonis, A. 10 Wolter, M. 10 Bernát, J. 9 Kaluza, A. 9 Klein, N. 9 Schroth, P. 9 Alam, A. 8 Lepsa, M. I. 8 see all ... less ...

Halbleiterschichtsysteme und Mesoskopische Strukturen 57 Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik 53 Halbleiterbauelemente und Analytik 42 Grundlagen für zukünftige Informationstechnologien 41 Ionen- und Lithographietechnik 8 Ionentechnik 8 more ... Schichtsysteme und Bauelemente der Supraleiterelektronik 5 ohne FE 4 Festkörperforschung für die Informationstechnik 3 Grundlagen und Technologie von Dünnschichtsolarzellen 2 Umweltprobenbank 2 Kondensierte Materie 1 Photovoltaik 1 see all ... less ...

Institut für Halbleiterschichten und Bauelemente; ISG-1 89 Institut für Schicht- und Ionentechnik; ISI 55 Center of Nanoelectronic Systems for Information Technology; CNI 47 Halbleiter-Nanoelektronik; IBN-1 37 Institut für Bio- und Chemosensoren; ISG-2 36 JARA-FIT; JARA-FIT 14 more ... Halbleiter-Nanoelektronik; PGI-9 4 Institut für Festkörperforschung; IFF 3 Institut für Photovoltaik; IPV 3 Angewandte Physikalische Chemie; ICG-7 2 Zentralabteilung für Chemische Analysen; ZCH 2 Agrosphäre; ICG-IV 1 Elektronische Eigenschaften; IFF-IEE 1 Institut für Bio- und Nanosysteme - Bioelektronik; IBN-2 1 Institut für Grenzflächen und Vakuumtechnologien; ISG-3 1 Phytosphäre; ICG-III 1 Prozesstechnologie; IBN-PT 1 see all ... less ...

2000 31 2001 28 1999 22 2002 20 2006 20 2005 17 more ... 2003 12 2008 9 2004 6 2007 4 2009 4 1998 2 2012 2 2010 1 2011 1 see all ... less ...

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