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1

Journal Article

2D-1D crossover from quantum well to quantum wire behavior in GaAs V-groove structures

Roshan, R.
2002

Physica / E, 13 (2002) S. 174 - 177

2

Journal Article

A (bio-)chemical field-effect sensor with macroporous Si as substrate material and a SiO2/LPCVD-Si3N4 double layer as pH transducer

Schöning, M. J.
2002

Sensors, 2 (2002) S. 11

OpenAccess OpenAccess

3

Conference Presentation

A BioFET on the basis of intact insect antennae

Schöning, M. J.
2005

4

Journal Article

A long-term stable macroporous-type EIS structure for electrochemical sensor applications

Simonis, A.
2003

Sensors and actuators / B, 91 (2003) S. 21 - 25

5

A long-term stable macroporous-type EIS structure for electrochemical sensor applications

Simonis, A.
2003

6

Journal Article

AlGaN/GaN HEMTs on (111) silicon substrates

Javorka, P.
2002

IEEE Electron Device Letters, 23 (2002) S. 4 - 6

OpenAccess

7

Conference Presentation

AlGaN/GaN HEMTs on silicon substrates

Marso, M.
2002

8

Conference Presentation

AlGaN/GaN-HEMTs on silicon substrates

Lüth, H.
2002

9

Conference Presentation

AlGaN/GaN-heterostructures for HEMT application : some aspects for improvement

Lüth, H.
2002

10

Conference Presentation

An AlGaN/GaN two-color photodetector based on AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

11

Talk (non-conference)

Basics of Quantum Mechanics and Solid State Physics

Lüth, H.
2003

12

Conference Presentation

Bias-dependent spectral responsivity of AlGaN/GaN photodetectors based on an AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2005

13

Capacitance characterization of AlN/GaN double barrier resonant tunnelling diodes

Kurakin, A. M.
2005

14

Journal Article

Carrier relaxation in GaAs v-groove quantum wires and the effects of localization

Cade, N. I.
2004

Physical Review B Physical review / B, 70 70 (2004 2004) 19 19, S. 195308 195308

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15

Talk (non-conference)

Cathodoluminescence investigations of AlN and AlxGa1-xN alloys

Teofilov, N.
2002

16

Journal Article

Comment on : Influence of crystal polarity on the properties of Pt/GaN Schottky diodes (77 (2000), S. 2012)

Rizzi, A.
2002

Applied physics letters, 80 (2002) S. 530 - 531

OpenAccess

17

Conference Presentation

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Heidelberger, G.
2005

18

Contribution to a book
Contribution to a conference proceedings

Current bistability in delta doped tunneling diodes

Vitusevich, S. A.
2002

19

Journal Article

Current-injection in a ballistic multiterminal superconductor/two-dimensional electron gas Josephson junction

Schäpers, T.
2003

Physical Review B Physical review / B, 67 67 (2003 2003) 1 1, S. 014522 014522

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20

Talk (non-conference)

DC and Pulsed Behaviour of Undoped and Doped AlGaN/GaN/SiC HEMTs before and after Si3N4 Passivation

Bernát, J.
2004

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