JuLib | Articles & more - {"Halbleiter-Nanoelektronik; IBN-1"}

Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Lupták, R.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01A301

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Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Feste, S. F.
2010

Journal of applied physics, 107 (2010) S. 044510-6

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3

Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Roeckerath, M.
2009

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Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Lopes, J. M. J.
2009

Microelectronic engineering, 86 (2009)

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Ternary rare-earth based gate dielectrics for future integration in MOSFETs

Schubert, J.
2009

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Investigation of Arsenic dopant segregation layers for scaled Schottky-Barrier MOSFETs

Feste, S. F.
2009

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Flask Lamp Activation of n- and p-type dopants in strained and unstrained SOI and SGOI

Minamisawa, R. A.
2009

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High temperature implantation: a solution for N-type junctions in strained silicon

Heiermann, W.
2009

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High temperature antimony ion implantation in strained silicon-on-insulator

Buca, D.
2009

Solid state electronics, 53 (2009) S. 828 - 832

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Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-k films on Si(100) and its effects on the electrical characteristics

Lopes, J. M. J.
2009

Applied physics / A, 96 (2009) S. 447 - 451

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Contribution to a book

Flash Lamp Activation of n- and p-type dopants in strained and unstrained SOI and HOI

Minamisawa, R. A.
2009

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Contribution to a book

High temperature implantation: a solution for N-type junctions in strained silicon

Heiermann, W.
2009

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13

Conference Presentation

Rare-earth based alternative gate dielectrics for future integration in MOSFETs

Lopes, J. M. J.
2009

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Contribution to a book
Contribution to a conference proceedings

Rare-earth based alternative gate dielectrics for future integration in MOSFETs

Lopes, J. M. J.
2009

“...Halbleiter-Nanoelektronik; IBN-1 Halbleiter-Nanoelektronik...”

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Contribution to a book
Contribution to a conference proceedings

Rare-earth Scandate High-k Films for Future Ge CMOS Technologies

Lopes, J. M. J.
2009

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Schottky-barrier height tuning og Ni and Pt germanide/n-Ge contacts using dopant segregation

Müller, M.
2009

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Alternative ternary gate-dielectrics on germanium substrates

Schubert, J.
2009

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MOVPE of Cr-doped GaN with respect to spintronic applications

Hardtdegen, H.
2008

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Study of Antimony activation in strained silicon

Buca, D.
2008

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