JuLib | Articles & more - {"JARA-FIT; JARA-FIT"}

101

Formation of steep, low Schottky-barrier contacts by dopant segregation during nickel silicidation

Feste, S. F.
2010

Journal of applied physics, 107 (2010) S. 044510-6

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102

Contribution to a book

Flash Lamp Activation of n- and p-type dopants in strained and unstrained SOI and HOI

Minamisawa, R. A.
2009

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

103

Journal Article

High temperature antimony ion implantation in strained silicon-on-insulator

Buca, D.
2009

Solid state electronics, 53 (2009) S. 828 - 832

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104

Journal Article

Si ion implantation for strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures

Buca, D.
2009

Journal of applied physics, 105 (2009) S. 114905

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105

Conference Presentation

Rare-earth based alternative gate dielectrics for future integration in MOSFETs

Lopes, J. M. J.
2009

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106

Journal Article

Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-k films on Si(100) and its effects on the electrical characteristics

Lopes, J. M. J.
2009

Applied physics / A, 96 (2009) S. 447 - 451

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107

Journal Article

Measurement of effective electron mass in biaxial tensile strained silicon on insulator

Feste, S. F.
2009

Applied physics letters, 95 (2009) S. 182101

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108

Conference Presentation

Tip Enhanced Raman Spectroscopy for High Resolution Assessment of Strained Silicon Devices

Sanderson, L.
2009

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109

Conference Presentation

Uniaxial strain relaxation in He-implanted (110) oriented SiGe layers

Buca, D.
2009

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110

Journal Article

NiSi2/Si interface chemistry and epitaxial growth mode

Mi, S.B.
2009

Acta materialia, 57 (2009) 1, S. 232 - 236

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111

Journal Article

Epitaxial growth of NiSi2 induced by sulfur segregation at the NiSi2/Si(100) interface

Zhao, Q. T.
2009

Journal of materials research, 24 (2009) S. 135139

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112

Contribution to a book
Contribution to a conference proceedings

Rare-earth based alternative gate dielectrics for future integration in MOSFETs

Lopes, J. M. J.
2009

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

113

Poster

Investigation of Arsenic dopant segregation layers for scaled Schottky-Barrier MOSFETs

Feste, S. F.
2009

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

114

Poster

Flask Lamp Activation of n- and p-type dopants in strained and unstrained SOI and SGOI

Minamisawa, R. A.
2009

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

115

Talk (non-conference)

Performance enhancement of uniaxially-tensile strained Si NW-nFETs fabricated by lateral strain relaxation of SSOI

Feste, S. F.
2009

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116

Talk (non-conference)

Strained channel materials for SOI transistors

Mantl, S.
2009

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117

Talk (non-conference)

Novel channel and dielectric materials for nanoelectronics

Mantl, S.
2009

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

118

Talk (non-conference)

Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

Roeckerath, M.
2009

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

119

Talk (non-conference)

Rare-earth Scandate High-k Films for Future Ge CMOS Technologies

Lopes, J. M. J.
2009

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120

Talk (non-conference)

Effects of Post-Deposition Annealing on the Characteristics of LaLuO3/Ge(100) Structures

Radtke, C.
2009

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

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