JuLib | Articles & more

1

Journal Article

Growth of strained Si on He ion implanted Si/SiGe heterostructures

Buca, D.
2006

Solid state electronics, 50 (2006) S. 32 - 37

2

Conference Presentation

Adjustable hydrogen atom incorporation into sputter deposited a-SiC

Tschersich, K. G.
2005

3

Journal Article

Tensely strained silicon on SiGe produced by strain transfer

Buca, D.
2004

Applied physics letters, 85 (2004) S. 2499 - 2501

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4

Journal Article

Luminescence of erbium-implanted dielectric films

Lu, F.
2003

Thin solid films, 425 (2003) S. 171 - 174

5

Journal Article

Electroluminescence study on electron hole plasma in strained SiGe epitaxial layers

Stoica, T.
2003

Physica / E, 16 (2003)

6

Journal Article

Optical and structural properties of ß-FeSi2 precipitate layers in silicon

Schuller, B.
2003

Journal of applied physics, 94 (2003) S. 207 - 211

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7

Journal Article

Ion implantation of rare earth ions for light emitters

Buchal, C.
2002

Nuclear instruments & methods in physics research / B, 190 (2002) S. 40 - 46

8

Journal Article

Green electroluminescence from a Tb-doped AIN thin-film device on Si

Lu, F.
2002

Journal of applied physics, 92 (2002) S. 2457 - 2460

OpenAccess

9

Conference Presentation

Optische Eigenschaften von beta-FeSi2-Präzipitaten in Silizium

Schuller, B.
2001

10

Poster

Structural and optoelectronic properties of microcrystalline silicon germanium

Krause, M.
2001

11

Journal Article

On the suitability of getter purified hydrogen for the LP-MOVPE of (AlGa)As : a comparison to Pd-diffused hydrogen

Hardtdegen, H.
2001

Journal of electronic materials, 30 (2001) S. 1397

12

Talk (non-conference)

Luminescence lifetime on the 1.5 mu-m emission of beta-FeSi2 precipitate layers in silicon

Schuller, B.
2001

13

Journal Article

Efficient electroluminescence from rare earth doped MOS diodes

Wang, S.
2001

Materials science and engineering / B, 81 (2001) S. 102 - 104

14

Journal Article

Electrical and optical characterization of semiconducting Ru2Si3 films and single crystals

Lenssen, D.
2001

Journal of applied physics, 90 (2001) S. 3347 - 3352

OpenAccess

15

Talk (non-conference)

Investigations on the influence of traps in AlGaN/GaN HEMTs

Wolter, M.
2001

16

Journal Article

Study of structure and optical properties of beta-FeSi2 precipitates formed by ion-implantation of Fe+ in Si (100) and effect of co-implantation of Fe+ and Si+ in amorphous SiO2

Oyoshi, A. N.
2001

Thin solid films, 381 (2001) S. 194 - 201

17

Journal Article

Formation of beta-FeSi2 precipitates at the SiO2/Si interface by Fe+ ion-implantation and their structural and optical properties

Oyoshi, A. N.
2001

Thin solid films, 381 (2001) S. 202 - 208

18

Journal Article

Optical properties of semiconducting Ru2Si3

Shaposhnikov, V. I.
2001

Optical materials, 17 (2001) S. 339 - 341

19

Journal Article

Optical properties of beta-FeSi2 precipitate layers in silicon

Schuller, B.
2001

Optical materials, 17 (2001) S. 121 - 124

20

Journal Article

Modification of beta-FeSi2 precipitate layers in silicon by hydrogen implantation

Schuller, B.
2001

Microelectronic engineering, 55 (2001) S. 219 - 225

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